N-type group III nitride semiconductor layered structure
US7855386B2 · kind B2 · utility
1Cited by
3References
32Claims
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Assignee
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Key dates
| Filing date | Apr 27, 2005 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Mar 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits.The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.