Silicon carbide semiconductor device and method of manufacturing the same
US7855412B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2009 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | May 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SiC semiconductor device includes a substrate, a drift layer disposed on a first surface of the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a trench penetrating the source region and the base region to the drift layer, a gate insulating layer disposed on a surface of the trench, a gate electrode disposed on a surface of the gate insulating layer, a first electrode electrically coupled with the source region and the base region, a second electrode disposed on the second surface of the substrate, and a second conductivity-type layer disposed at a portion of the base region located under the source region. The second conductivity-type layer has the second conductivity type and has an impurity concentration higher than the base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.