Sputtering film forming method, electronic device manufacturing method, and sputtering system
US7857946B2 · kind B2 · utility
4Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2008 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Feb 25, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/505
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering film forming method. which positions a target 4 and 5 at an incline to a surface of a substrate 10 whereupon a film is to be formed, and forms the film upon the surface of the substrate 10 whereupon the film is to be formed in an incline direction while the substrate 10 is rotated about a normal axis, terminates the forming of the film at a predetermined timing from the commencement of the forming of the film, wherein the forming of the film is terminated, when the substrate has rotated by 360 degrees×n+180 degrees+α, where n is a natural number, including 0, and −10 degrees<α<10 degrees.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.