Metal-polishing liquid and chemical mechanical polishing method using the same
US7857985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2007 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Dec 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.