Semiconductor device test structures and methods

US7858406B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfgang Walter · Heidelberg, DE
• Klaus-Peter Koller · Bad Soden, DE

Key dates

• Filing date: Feb 6, 2007
• Grant date: Dec 28, 2010
• Expiry date: Aug 10, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Semiconductor device test structures and methods are disclosed. In a preferred embodiment, a test structure includes a feed line disposed in a first conductive material layer, and a stress line disposed in the first conductive material layer proximate the feed line yet spaced apart from the feed line. The stress line is coupled to the feed line by a conductive feature disposed in at least one second conductive material layer proximate the first conductive material layer.