Method for forming a lens using sub-micron horizontal tip feature
US7858428B1 · kind B1 · utility
1Cited by
6References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2005 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Aug 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for creating graded or tapered dopant profiles in a semiconductor layer or layers. Preferably, a sub-micron horizontal tip feature is used to control the doping of the layer beneath the feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.