Semiconductor device, its manufacture method and template substrate
US7858436B2 · kind B2 · utility
5Cited by
7References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 27, 2008 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Feb 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device has: a ZnO-containing substrate containing Li; a zinc silicate layer formed above the ZnO-containing substrate; and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.