Thyristor device with carbon lifetime adjustment implant and its method of fabrication
US7858449B2 · kind B2 · utility
1Cited by
10References
13Claims
0Family size
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Key dates
| Filing date | Feb 9, 2009 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Feb 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for the thyristor to affect leakage characteristics. The density of the carbon and/or a bombardment energy and/or an anneal therefore may be selected to establish a low-voltage, leakage characteristic for the junction substantially greater than its leakage absent the carbon. In one embodiment, an anneal of the implanted carbon may be performed in common with an activation for other implant regions the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.