Method for the production of a semiconductor component comprising a planar contact, and semiconductor component
US7859005B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 30, 2006 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Aug 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for producing a semiconductor component, in particular a semiconductor structure having a surface structure or topography which is produced by means of electronic components (2) on a substrate (1), at least one electronic component (2) is applied to a substrate (1), and an isolation layer (3) is applied to the topography which is produced by means of the at least one component (2) on the substrate (1). Contact-making openings (5) are then produced in the isolation layer (3) at contact points (8, 9) for the at least one electronic component, the isolation layer (3) and the contact points (8, 9) in the contact-making openings (5) are planar-metallized, and the metallization is structured in order to produce electrical connections (4), with the isolation layer (3) having a glass coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.