Crystalline composition, wafer, device, and associated method
US7859008B2 · kind B2 · utility
6Cited by
22References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2007 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Jan 11, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.