Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
US7859016B2 · kind B2 · utility
4Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2009 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Jul 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.