Wafer level processing for backside illuminated sensors
US7859033B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 9, 2008 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Nov 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.