Gallium nitride-based III-V group compound semiconductor device and method of manufacturing the same
US7859109B2 · kind B2 · utility
7Cited by
1References
13Claims
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Key dates
| Filing date | Jan 14, 2005 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Oct 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a gallium nitride-based compound semiconductor device and a method of manufacturing the same. According to the present invention, there is provided a gallium nitride-based III-V group compound semiconductor device comprising a gallium nitride-based semiconductor layer and an ohmic electrode layer formed on the gallium nitride-based semiconductor layer. The ohmic electrode layer comprises a contact metal layer, a reflective metal layer, and a diffusion barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.