Process for making multi-crystalline silicon thin-film solar cells
US7863080B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2008 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Jan 7, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a p+ type back surface field film. The temperature is raised to grow a p− type light-soaking film on the p+ type back surface field film. Phosphine is deposited on the p− type light-soaking film to form an n+ type emitter. Thus, an n+-p−-p+ laminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n+-p−-p+ laminate, thus forming an anti-reflection film of SiCN/SiO2 on the n+ type emitter. The n+-p−-p+ laminate is etched in a patterned mask process. A p− type ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The n+ type emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An n− type ohmic contact is formed on the n+ type emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.