Contact fabrication of emitter wrap-through back contact silicon solar cells
US7863084B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2009 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Sep 3, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Back contact solar cells including rear surface structures and methods for making same. The rear surface has small contact areas through at least one dielectric layer, including but not limited to a passivation layer, a nitride layer, a diffusion barrier, and/or a metallization barrier. The dielectric layer is preferably screen printed. Large grid areas overlay the dielectric layer. The methods provide for increasing efficiency by minimizing p-type contact areas and maximizing n-type doped regions on the rear surface of a p-type substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.