Transistor for active matrix display and a method for producing said transistor
US7863113B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 6, 2004 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Dec 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
Abstract
A transistor for active matrix display and a method for producing the transistor (1). The transistor (1) includes a microcrystalline silicon film (5) and an insulator (3). The crystalline fraction of the microcrystalline silicon film (5) is above 80%. According to the invention, the transistor (1) includes a plasma treated interface (4) located between the insulator (3) and the microcrystalline silicon film (5) so that the transistor (1) has a linear mobility equal or superior to 1.5 cm2V−1s−1, shows threshold voltage stability and wherein the microcrystalline silicon film (5) includes grains (6) whose size ranges between 10 nm and 400 nm. The invention concerns as well a display unit having a line-column matrix of pixels that are actively addressed, each pixel comprising at least a transistor as described above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.