Method for fabricating Schottky barrier tunnel transistor
US7863121B2 · kind B2 · utility
1Cited by
6References
11Claims
0Family size
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Key dates
| Filing date | May 8, 2007 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Jul 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/01
Abstract
A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.