Myung Sim Jun
8Patents
2h-index
15Co-inventors
37Inventor score
Filing activity: Jul 13, 2006 → Jul 7, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7893466B2 | Semiconductor FET sensor and method of fabricating the same | Electricity | 5 | Active |
| US8241939B2 | Semiconductor nanowire sensor device and method for manufacturing the same | Electricity | 2 | Active |
| US7713826B2 | Method of manufacturing semiconductor device | Electricity | 1 | Active |
| US7863121B2 | Method for fabricating Schottky barrier tunnel transistor | Electricity | 1 | Active |
| US7545000B2 | Schottky barrier tunnel transistor and method of manufacturing the same | Electricity | 0 | Active |
| US7981735B2 | Method of manufacturing a Schottky barrier tunnel transistor | Electricity | 0 | Active |
| US8026508B2 | Semiconductor device and method of fabricating the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US7745316B2 | Method for fabricating Schottky barrier tunnel transistor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.