Method for fabricating a capacitor

US7863149B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Srivatsa Kundalgurki · Dresden, DE
• Peter Moll · Dresden, DE
• Dirk Manger · Dresden, DE
• Kristin Schupke · Dresden, DE
• Till Schloesser · Dresden, DE

Key dates

• Filing date: Sep 9, 2005
• Grant date: Jan 4, 2011
• Expiry date: May 11, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/318

Abstract

In a method for fabricating a capacitor that includes an electrode structure (80), an auxiliary layer (40) is formed over a substrate (10). A recess (60), which determines the shape of the electrode structure (80), is etched into the auxiliary layer (40), and the electrode structure of the capacitor is formed in the recess. As an example, the auxiliary layer can be a semiconductor layer (40).