Patent · US Active

Method of producing a strained layer

US7863156B2 · kind B2 · utility

1Cited by

0References

24Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Chrystel Deguet · Meylan, FR
Frank Fournel · Meylan, FR

Key dates

Filing date	Mar 24, 2009
Grant date	Jan 4, 2011
Priority date	—
Expiry date	Mar 24, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76254
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of producing a strained layer on a substrate includes assembling a layer with a first structure or first means of straining including at least one substrate or one layer capable of being deformed within a plane thereof under the influence of an electric or magnetic field or a photon flux. The layer is strained by modifying the electric or magnetic field or the photon flux. The strained layer is assembled with a transfer substrate and all or part of the first straining structure is removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.