Variable resistance non-volatile memory cells and methods of fabricating same
US7863173B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2007 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | May 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming a cup-shaped electrode on sidewalls of an opening in an insulation layer and through the opening on an ohmic layer that is stacked on a conductive structure. An insulation filling member is formed that at least partially fills an interior of the electrode. The insulation filling member is formed within a range of temperatures that is sufficiently low to not substantially change resistance of the ohmic layer. A variable resistivity material is formed on the insulation filling member and is electrically connected to the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.