Method for fabricating last level copper-to-C4 connection with interfacial cap structure
US7863183B2 · kind B2 · utility
6Cited by
73References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2006 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Jul 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for fabricating a semiconductor device with a last level copper-to-C4 connection that is essentially free of aluminum. Specifically, the last level copper-to-C4 connection comprises an interfacial cap structure containing CoWP, NiMoP, NiMoB, NiReP, NiWP, and combinations thereof. Preferably, the interfacial cap structure comprises at least one CoWP layer. Such a CoWP layer can be readily formed over a last level copper interconnect by a selective electroless plating process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.