SIC semiconductor having junction barrier Schottky diode
US7863682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2008 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Dec 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A semiconductor device having a junction barrier Schottky diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening of the insulation film and an ohmic electrode on the substrate; a terminal structure having a RESURF layer surrounding the cell region; and multiple second conductive type layers on an inner side of the RESURF layer. The second conductive type layers and the drift layer provide a PN diode. The Schottky electrode includes a first Schottky electrode contacting the second conductive type layers with ohmic contact and a second Schottky electrode contacting the drift layer with Schottky contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.