Device and method generating internal voltage in semiconductor memory device
US7864599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2009 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Jun 28, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device and a method of generating an internal voltage in the semiconductor memory device are provided. The semiconductor memory device includes a controller configured to activate a sensing enable signal when an active command is applied from outside, inactivate the sensing enable signal when a precharge command is applied, and output the sensing enable signal, and an array internal voltage generator configured to output an active array power supply voltage as an array power supply voltage when the sensing enable signal is activated, output an external array power supply voltage and a standby array power supply voltage as the array power supply voltage when the sensing enable signal is inactivated, and output the standby array power supply voltage alone as the array power supply voltage when the sensing enable signal is inactivated for at least a specific period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.