Temperature control method for photolithographic substrate
US7867403B2 · kind B2 · utility
Inventors
Key dates
| Filing date | May 31, 2007 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | May 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.