Method of use for photopatternable dielectric materials for BEOL applications
US7867689B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2007 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Aug 28, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.