Spin-dependent tunnelling cell and method of formation thereof
US7867788B2 · kind B2 · utility
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17References
20Claims
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Key dates
| Filing date | Sep 20, 2005 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Aug 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/307
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a combined thicknesses so that a Tunnelling Magnetoresistance versus voltage characteristic of the cell has a maximum at a non-zero bias voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.