Method of fabricating a semiconductor device including forming an insulating layer with a hard sheet buried therein
US7867828B2 · kind B2 · utility
6Cited by
4References
21Claims
0Family size
Assignees
Inventor
Key dates
| Filing date | Jul 24, 2007 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Oct 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a base plate, and a semiconductor constituent body formed on the base plate. The semiconductor constituent body has a semiconductor substrate and a plurality of external connecting electrodes formed on the semiconductor substrate. An insulating layer is formed on the base plate around the semiconductor constituent body. A hard sheet is formed on the insulating layer. An interconnection is connected to the external connecting electrodes of the semiconductor constituent body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.