Patent · US Active

Methods of manufacturing semiconductor structures

US7867912B2 · kind B2 · utility

4Cited by

3References

34Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Dirk Caspary · Dresden, DE
Arnd Scholz · Poughkeepsie, US
Stefano Parascandola · Dresden, DE
Christoph Nolscher · Dresden, DE

Key dates

Filing date	Feb 20, 2007
Grant date	Jan 11, 2011
Priority date	—
Expiry date	Nov 12, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/10
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing semiconductor structures is disclosed. In one embodiment, a first mask is provided above a substrate. The first mask includes first mask lines extending along a first axis. A second mask is provided above the first mask. The second mask includes second mask lines extending along a second axis that intersects the first axis. At least one of the first and second masks is formed by a pitch fragmentation method. Structures may be formed in the substrate, wherein the first and the second mask are effective as a combined mask. The structures may be equally spaced at a pitch in the range of a minimum lithographic feature size for repetitive line structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.