Arnd Scholz
9Patents
5h-index
23Co-inventors
55Inventor score
Filing activity: Sep 28, 2001 → Oct 10, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6951822B2 | Method for forming inside nitride spacer for deep trench device DRAM cell | Electricity | 35 | Expired |
| US7863136B2 | Method of manufacturing integrated circuits including a FET with a gate spacer and a fin | Electricity | 28 | Active |
| US7622354B2 | Integrated circuit and method of manufacturing an integrated circuit | Electricity | 16 | Active |
| US6825093B2 | Process window enhancement for deep trench spacer conservation | Electricity | 12 | Expired |
| US6586300B1 | Spacer assisted trench top isolation for vertical DRAM's | Electricity | 5 | Expired |
| US7867912B2 | Methods of manufacturing semiconductor structures | Electricity | 4 | Active |
| US6673686B1 | Method of forming a gate electrode contact spacer for a vertical DRAM device | Electricity | 4 | Expired |
| US6620699B2 | Method for forming inside nitride spacer for deep trench device DRAM cell | Electricity | 3 | Expired |
| US8138538B2 | Interconnect structure for semiconductor devices | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.