Thermal modulation of implant process
US7868306B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 2, 2008 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jul 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for ion implantation is disclosed which includes modulating the temperature of the substrate during the implant process. This modulation affects the properties of the substrate, and can be used to minimize EOR defects, selectively segregate and diffuse out secondary dopants, maximize or minimize the amorphous region, and vary other semiconductor parameters. In one particular embodiment, a combination of temperature modulated ion implants are used. Ion implantation at higher temperatures is used in sequence with regular baseline processing and with ion implantation at cold temperatures. The temperature modulation could be at the beginning or at the end of the process to alleviate the detrimental secondary dopant effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.