Power semiconductor component with a drift zone and a high-dielectric compensation zone and method for producing a compensation zone

US7868396B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Michael Rueb · Faak am See, AT
• Franz Hirler · Isen, DE

Key dates

• Filing date: Jan 31, 2007
• Grant date: Jan 11, 2011
• Expiry date: Dec 24, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A power semiconductor component includes a drift zone in a semiconductor body, a component junction and a compensation zone. The component junction is disposed between the drift zone and a further component zone, which is configured such that when a blocking voltage is applied to the component junction, a space charge zone forms extending generally in a first direction in the drift zone. The compensation zone is disposed adjacent to the drift zone in a second direction and includes at least one high-dielectric material having a temperature-dependent dielectric constant. The temperature dependence of the compensation zone varies in the second direction.