Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same
US7868458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2008 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Apr 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.