Reducing contamination in immersion lithography
US7869002B2 · kind B2 · utility
2Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2008 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Feb 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68735
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for reducing contamination in immersion lithography includes retaining a semiconductor wafer on a support surface of a wafer chuck, the wafer chuck having a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein; and providing a fluid circulation path within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.