Wafer processing method for improving gettering capabilities of wafers made therefrom
US7871904B2 · kind B2 · utility
2Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2009 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Aug 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer processing method for improving gettering capabilities of wafers made therefrom is presented. The method includes the steps of preparing, annealing and ion-implanting. The preparing step involves preparing the wafer from a silicon ingot. The annealing step involves forming first gettering sites in both sides of the wafer by annealing the wafer. The ion-implanting step involves forming second gettering sites in a back side of the wafer in which the first gettering sites are already formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.