Process and apparatus for treating wafers
US7871937B2 · kind B2 · utility
1Cited by
113References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2008 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Dec 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02381
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and systems are provided for low pressure baking to remove impurities from a semiconductor surface prior to deposition. Advantageously, the short, low temperature processes consume only a small portion of the thermal budget, while still proving effective at removing interfacial oxygen from the semiconductor surface. The methods and systems are particularly well suited for treating semiconductor surfaces before epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.