Solid-state imaging device
US7872287B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2008 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | May 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
Abstract
It is an object of the present invention to provide an image sensor having a high ratio of a surface area of a light receiving element to a surface area of one pixel. The above-described object is achieved by an inventive solid-state imaging device unit comprising solid-state imaging devices arranged on a substrate according to the present invention. The solid-state imaging device comprises a signal line formed on the substrate, an island shaped semiconductor placed over the signal line, and a pixel selection line connected to an upper portion of the island shaped semiconductor. The island shaped semiconductor comprises a first semiconductor layer disposed in a lower portion of the island shaped semiconductor and connected to the signal line, a second semiconductor layer disposed adjacent to an upper side of the first semiconductor layer, a gate connected to the second semiconductor layer via an insulating film, an electric charge accumulator comprising a third semiconductor layer connected to the second semiconductor layer and carrying a quantity of electric charges which varies in response to a light reception, and a fourth semiconductor layer disposed adjacent to an upper side o…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.