Correlated electron memory
US7872900B2 · kind B2 · utility
121Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2007 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Apr 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A non-volatile resistive switching memory that includes a homogeneous material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.