Unidirectional-current magnetization-reversal magnetoresistance element and magnetic recording apparatus
US7872906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2008 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Jul 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory for which writing is conducted by using a unidirectional write current. Currents which differ in current pulse width are applied to a magnetoresistance element in a film thickness direction of the magnetoresistance element consisting of a first ferromagnetic layer having a fixed magnetization direction, a second ferromagnetic layer having a variable magnetization direction, a third ferromagnetic layer having a variable magnetization direction, a first non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, and a second non-magnetic layer located between the second ferromagnetic layer and the third ferromagnetic layer, to reverse a magnetization direction of either the second ferromagnetic layer or the third ferromagnetic layer by using a spin-transfer torque.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.