Katsuya Miura
25Patents
5h-index
36Co-inventors
69Inventor score
Filing activity: Oct 12, 2000 → Nov 29, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6360142B1 | Random work arranging device | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7755932B2 | Spin torque magnetic memory and offset magnetic field correcting method thereof | Emerging Cross-Sectional Technologies | 9 | Active |
| US8917541B2 | Magnetoresistance effect element and magnetic memory | Emerging Cross-Sectional Technologies | 5 | Active |
| US7872906B2 | Unidirectional-current magnetization-reversal magnetoresistance element and magnetic recording apparatus | Electricity | 5 | Active |
| US9135973B2 | Magnetoresistance effect element and magnetic memory | Electricity | 5 | Active |
| US9153306B2 | Tunnel magnetoresistive effect element and random access memory using same | Electricity | 3 | Active |
| US9450177B2 | Magnetoresistive element and magnetic memory | Electricity | 3 | Active |
| US8837209B2 | Magnetic memory cell and magnetic random access memory | Emerging Cross-Sectional Technologies | 2 | Active |
| US8957486B2 | Magnetic memory | Physics | 2 | Active |
| US8409074B2 | Sleeping state improvement system and sleeping state improvement method | Human Necessities | 2 | Active |
| US9564152B2 | Magnetoresistance effect element and magnetic memory | Emerging Cross-Sectional Technologies | 2 | Active |
| US9602103B2 | Spin wave device and logic circuit using spin wave device | Electricity | 2 | Active |
| US9070457B2 | Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory | Emerging Cross-Sectional Technologies | 1 | Active |
| US10488270B2 | Platinum temperature sensor element | Electricity | 1 | Active |
| US10804457B2 | Magnetoresistive element and magnetic memory | Electricity | 1 | Active |
| US11276816B2 | Method of manufacturing magnetic tunnel junction and magnetic tunnel junction | Electricity | 1 | Active |
| US10651369B2 | Magnetoresistive element and magnetic memory | Emerging Cross-Sectional Technologies | 0 | Active |
| US11131586B2 | Temperature sensor element | Physics | 0 | Active |
| US12264954B2 | Flow sensor element | Physics | 0 | Active |
| US10336609B2 | Microstructure processing method and microstructure processing apparatus | Emerging Cross-Sectional Technologies | 0 | Active |
| US11164906B2 | Magnetic tunnel junction element, magnetic memory using the same, and manufacture method of magnetic tunnel junction element | Electricity | 0 | Active |
| US12432860B2 | Electronic device | Electricity | 0 | Active |
| US11165015B2 | Magnetic tunnel junction device, magnetoresistive random access memory using same and manufacturing method of magnetic tunnel junction device | Electricity | 0 | Active |
| US11678583B2 | Method of manufacturing magnetic tunnel junction and magnetic tunnel junction | Electricity | 0 | Active |
| US7613036B2 | Memory element utilizing magnetization switching caused by spin accumulation and spin RAM device using the memory element | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.