Phase change memory devices and fabrication methods thereof
US7872908B2 · kind B2 · utility
5Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2009 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Aug 4, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/754
Abstract
In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.