Group III nitride semiconductor element and epitaxial wafer
US7873088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2010 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | May 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3 shown in FIG. 5) of the GaN supporting base and the (0001) plane of a buffer layer 33a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4 shown in FIG. 5) and the (0001) plane of a well layer 37a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.