Plasma processing method
US7875322B2 · kind B2 · utility
15Cited by
0References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2006 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | Sep 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a microwave transmission plate into space above a wafer within a chamber. An electromagnetic field is formed in the chamber by pulsated microwaves radiated into the chamber from the planar antenna member through the microwave transmission plate, turning an Ar gas, H2 gas and O2 gas into plasma to form an oxide film on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.