Method of fabricating image sensor having inner lens
US7875488B2 · kind B2 · utility
2Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | Mar 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.