Semiconductor substrate with islands of diamond and resulting devices
US7875934B2 · kind B2 · utility
1Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2008 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | Feb 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of forming a substrate having islands of diamond (or other material, such as diamond-like carbon), as well as integrated circuit devices formed from such a substrate. A diamond island can form part of the thermal solution for an integrated circuit formed on the substrate, and the diamond island can also provide part of a stress engineering solution to improve performance of the integrated circuit. Other embodiments are described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.