Method for processing polysilazane film
US7879397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | May 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02326
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a polysilazane film includes performing temperature increase of changing a process field of a reaction container, which accommodates a target substrate with a polysilazane coating film formed thereon, from a pre-heating temperature to a predetermined temperature, while setting the process field to be a first atmosphere containing oxygen and having a first pressure of 6.7 to 26.7 kPa. Then, the method includes performing a first heat process for obtaining an insulating film containing silicon and oxygen by baking the coating film at a first process temperature not lower than the predetermined temperature, while setting the process field to be a second atmosphere containing an oxidizing gas and having a second pressure higher than the first pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.