Structure and method of fabricating a transistor having a trench gate
US7879665B2 · kind B2 · utility
4Cited by
15References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2008 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Feb 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit transistor is fabricated with a trench gate having nonconductive sidewalls. The transistor is surrounded by an isolation trench filled with a nonconductive material. The sidewalls of the gate trench are formed of the nonconductive material and are substantially free of unetched substrate material. As a result, the sidewalls of the gate trench do not form an undesired conductive path between the source and the drain of the transistor, thereby advantageously reducing the amount of parasitic current that flows between the source and drain during operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.