Inventor · Boise, ID, US

Mark A. Helm

125Patents
12h-index
70Co-inventors
89Inventor score

Filing activity: Apr 29, 1994 → Mar 20, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US5624863A Semiconductor processing method of forming complementary N-type doped and P-type doped active regions within a semiconductor substrate Emerging Cross-Sectional Technologies 132 Expired
US7755146B2 Formation of standard voltage threshold and low voltage threshold MOSFET devices Electricity 122 Active
US5534449A Methods of forming complementary metal oxide semiconductor (CMOS) integrated circuitry Electricity 73 Expired
US5747855A CMOS integrated circuitry with Halo and LDD regions Electricity 26 Expired
US5523258A Method for avoiding lithographic rounding effects for semiconductor fabrication Emerging Cross-Sectional Technologies 23 Expired
US7112488B2 Source lines for NAND memory devices Physics 22 Expired
US5776806A Method of forming CMOS integrated circuitry having halo regions Electricity 21 Expired
US6268250A Efficient fabrication process for dual well type structures Electricity 19 Expired
US6124616A Integrated circuitry comprising halo regions and LDD regions Electricity 18 Expired
US5683927A Method of forming CMOS integrated circuitry Electricity 18 Expired
US9070442B2 Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods Emerging Cross-Sectional Technologies 17 Active
US6004854A Method of forming CMOS integrated circuitry Electricity 13 Expired
US5970335A Semiconductor processing method of forming complementary n-type doped and p-type doped active regions within a semiconductor substrate Emerging Cross-Sectional Technologies 12 Expired
US9947418B2 Boosted channel programming of memory Physics 11 Active
US7499325B2 Flash memory device with improved erase operation Physics 11 Active
US8203876B2 Reducing effects of erase disturb in a memory device Physics 9 Active
US9607692B2 Threshold voltage distribution determination Physics 8 Active
US9754683B2 Method and system to obtain state confidence data using multistrobe read of a non-volatile memory Physics 8 Active
US6261888A Method of forming CMOS integrated circuitry Electricity 7 Expired
US6635530B2 Methods of forming gated semiconductor assemblies Electricity 7 Expired
US9159736B2 Data line arrangement and pillar arrangement in apparatuses Electricity 6 Active
US6358787B2 Method of forming CMOS integrated circuitry Electricity 6 Expired
US6756634B2 Gated semiconductor assemblies Electricity 6 Expired
US6849492B2 Method for forming standard voltage threshold and low voltage threshold MOSFET devices Electricity 6 Expired
US7701780B2 Non-volatile memory cell healing Physics 6 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.