Method of manufacturing nonvolatile storage device
US7879670B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2009 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Sep 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a nonvolatile storage device having memory cell arrays according to an embodiment of the present invention includes forming, in a memory cell array forming region above a processed film, first columnar members arrayed at substantially equal intervals in the first direction and the second direction, forming, concerning at least arrays as a part of arrays of the first columnar members in the first direction, second columnar members long in section having major axes longer than sections of the first columnar members outside of the memory cell array forming region such that the major axes are set in the first direction and the second columnar members continue to ends of the arrays, and forming, in the same manner as above, third columnar members, which continue to arrays of the first columnar members in the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.