Methods of forming electronic structures including conductive shunt layers and related structures
US7879715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Feb 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15787
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.